The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction

Shinichi HOSHI
Takayuki IZUMI
Tomoyuki OHSHIMA
Tamotsu KIMURA

IEICE TRANSACTIONS on Electronics   Vol.E84-C    No.10    pp.1350-1355
Publication Date: 2001/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
InGaAs/AlGaAs pseudomorphic high electron mobility transistor,  RIE-damage,  recombination enhanced defect reaction,  

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The reduction of the drain current for InGaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been observed due to the RIE-damage induced under the gate region. However, it has been found that the drain current can be recovered after the gate-drain reverse current stress even at room temperature. The recovery rate of the drain current strongly depends on the gate-drain reverse current density. The activation energy of the recovery rate has been confirmed to decrease from 0.531 eV to 0.119 eV under the gate-drain reverse current stress. This phenomenon can be understood as a recombination enhanced defect reaction of holes generated by the avalanche breakdown. The non-radiative recombination of holes at the defect level is believed to enhance the recovery of the RIE-damage.