InGaP-Channel Field Effect Transistors with High Breakdown Voltage

Naoki HARA
Yasuhiro NAKASHA
Toshihide KIKKAWA
Kazukiyo JOSHIN
Hitoshi TANAKA

IEICE TRANSACTIONS on Electronics   Vol.E84-C    No.10    pp.1294-1299
Publication Date: 2001/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
InGaP-channel FET,  high breakdown voltage,  high operating voltage,  low distortion,  

Full Text: PDF>>
Buy this Article

We have developed InGaP-channel field effect transistors (FETs) with high breakdown voltages that can be fabricated by using conventional GaAs FET fabrication processes. The buffer and barrier layers were also optimized for the realization of high-voltage operation. The InGaP-channel FET has an extremely high on-state drain-to-source breakdown voltage of over 40 V, and a gate-to-drain breakdown voltage of 55 V. This enabled high-voltage large-signal operation at 40 V. The third-order intermodulation distortion of the InGaP channel FETs was 10-20 dB lower than that of an equivalent GaAs-channel FET, due to the high operating voltage.