Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs

Tetsuya SUEMITSU  Tetsuyoshi ISHII  Yasunobu ISHII  

IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.10   pp.1283-1288
Publication Date: 2001/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
high-speed devices,  millimeter wave FETs,  HEMT,  indium phosphide,  

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InP-based high electron mobility transistors (HEMTs) with gate lengths reduced to 30 nm were fabricated and characterized, and the effect of the gate recess on the high-frequency characteristics was studied. The cutoff frequency, which is regarded as a function of the gate length and the average carrier velocity in a first-order approximation, depends on the size of the gate recess when the gate length becomes short. The size of the gate recess is optimized by taking the feed-back capacitance and the parasitic resistance into account. For HEMTs having the gate recess with an InP surface, an appropriate widening of the gate recess gives a record cutoff frequency of 368 GHz for the 30-nm-gate HEMTs with a lattice-matched channel.