Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers

Toshio HIGASHI  Tsuyoshi YAMAMOTO  Tsutomu ISHIKAWA  Takuya FUJII  Haruhisa SODA  Minoru YAMADA  

IEICE TRANSACTIONS on Communications   Vol.E84-B   No.5   pp.1274-1281
Publication Date: 2001/05/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Category: Optical Active Devices and Modules
semiconductor laser,  gain,  temperature,  threshold current,  oscillation wavelength,  

Full Text: PDF>>
Buy this Article

We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.