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Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers
Toshio HIGASHI Tsuyoshi YAMAMOTO Tsutomu ISHIKAWA Takuya FUJII Haruhisa SODA Minoru YAMADA
IEICE TRANSACTIONS on Communications
Publication Date: 2001/05/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Category: Optical Active Devices and Modules
semiconductor laser, gain, temperature, threshold current, oscillation wavelength,
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We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.