Statistical Modeling of Device Characteristics with Systematic Variability

Kenichi OKADA  Hidetoshi ONODERA  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E84-A   No.2   pp.529-536
Publication Date: 2001/02/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
Category: 
Keyword: 
MOSFET,  variability,  systematic,  stochastic,  

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Summary: 
The variabilities of device characteristics are usually regarded as a normal distribution. If we consider the variabilities over the whole wafer, however, they cannot be expressed as a normal distribution due to the existence of global systematic component. We propose a statistical model, characterizing the global systematic component according to the distance from the center of the wafer, which can express the variabilities over the whole wafer statistically.