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Post-Layout Transistor Sizing for Power Reduction in Cell-Base Design
Masanori HASHIMOTO Hidetoshi ONODERA
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/11/01
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Optimization of Power and Timing
transistor sizing, low power design, cell-base design, post-layout optimization, gate sizing,
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We propose a transistor sizing method that downsizes MOSFETs inside a cell to eliminate redundancy of cell-based circuits as much as possible. Our method reduces power dissipation of detail-routed circuits while preserving interconnects. The effectiveness of our method is experimentally evaluated using 3 circuits. The power dissipation is reduced by 75% maximum and 60% on average without delay increase. Compared with discrete cell sizing, the proposed method reduces power dissipation furthermore by 30% on average.