An IDDQ Sensor Driven by Abnormal IDDQ

Yukiya MIURA  

Publication
IEICE TRANSACTIONS on Information and Systems   Vol.E83-D   No.10   pp.1860-1867
Publication Date: 2000/10/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8532
Type of Manuscript: PAPER
Category: Fault Tolerance
Keyword: 
built-in testing,  CMOS circuits,  IDDQ sensor circuits,  IDDQ testing,  low-voltage ICs,  

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Summary: 
This paper describes a novel IDDQ sensor circuit that is driven by only an abnormal IDDQ. The sensor circuit has relatively high sensitivity and can operate at a low supply voltage. Based on a very simple idea, it requires two additional power supplies. It can operate at either 5-V or 3.3-V VDD with the same design. Simulation results show that it can detect a 16-µA abnormal IDDQ at 3.3-V VDD. This sensor circuit causes a smaller voltage drop and smaller performance penalty in the circuit under test than other ones.