Id-Vg characteristics of a MOSFET with an oblique Si surface, and it is shown that protection of the whole surface of the channel region is necessary to estimate drain current correctly." />


A Three-Dimensional Mesh Generation Method with Precedent Triangulation of Boundary

Katsuhiko TANAKA  Akio NOTSU  Akio FURUKAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.8   pp.1343-1348
Publication Date: 2000/08/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Numerics
Keyword: 
device simulation,  mesh generation,  

Full Text: PDF>>
Buy this Article




Summary: 
A three-dimensional mesh generation method in which triangulation of the domain boundary is performed first is desirable since such a method would make it easier to achieve the requirements for the mesh around the boundary. We have developed a mesh generator for a 3D device simulator based on this approach. This mesh generator recursively subdivides a box that includes the whole domain into smaller boxes (cells), a method known as the octree technique. Although our mesh generator is similar to previously reported mesh generators in the sense that it utilizes recursive subdivision of elements, its major difference is that it constructs a triangular mesh upon boundaries of the domain first and this triangular mesh is not changed in the following processes. In order to generate a mesh suitable for the control volume method, a "forbidden region" is introduced and mesh points in the domain are allocated outside of this region. Since the triangular mesh is determined prior to tessellation of the domain, this method is suitable for handling layered mesh along the boundary, which is often necessary to estimate large flows parallel to the boundary precisely. A simple method to provide a layered mesh for a planar boundary is incorporated into the mesh generator. This mesh generator is integrated within our in-house three-dimensional device simulation system. The simulator's practicality is demonstrated through analysis of the reverse narrow channel effect for MOSFETs with LOCOS isolation structures. The effect of protection of the boundary by the layered mesh is also examined by calculating Id-Vg characteristics of a MOSFET with an oblique Si surface, and it is shown that protection of the whole surface of the channel region is necessary to estimate drain current correctly.