A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation

Alexander BURENKOV  Klaus TIETZEL  Andreas HOSSINGER  Jurgen LORENZ  Heiner RYSSEL  Siegfried SELBERHERR  

IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.8   pp.1259-1266
Publication Date: 2000/08/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
ion implantation,  three-dimensional,  Monte-Carlo,  analytical,  simulation,  

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The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.