RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation

Scott ROY  Sava KAYA  Asen ASENOV  John R. BARKER  

IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.8   pp.1224-1227
Publication Date: 2000/08/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
device simulation,  Monte Carlo,  MOSFETs,  RF,  

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A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.