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RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation
Scott ROY Sava KAYA Asen ASENOV John R. BARKER
IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
device simulation, Monte Carlo, MOSFETs, RF,
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A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.