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Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE
Lucia SCOZZOLI Susanna REGGIANI Massimo RUDAN
IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
semiconductor materials and devices, silicon dioxide, Boltzmann equation, spherical-harmonics expansion,
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A first-order investigation of the transport and energy-loss processes in silicon dioxide is worked out in the frame of the Spherical-Harmonics solution of the Boltzmann Transport Equation. The SiO2 conduction band is treated as a single-valley spherical and parabolic band. The relevant scattering mechanisms are modeled consistently: both the polar and nonpolar electron-phonon scattering mechanisms are considered. The scattering rates for each contribution are analyzed in comparison with Monte Carlo data. A number of macroscopic transport properties of electrons in SiO2 are worked out in the steady-state regime for a homogeneous bulk structure. The investigation shows a good agreement in comparison with experiments in the low-field regime and for different temperatures.