Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE

Lucia SCOZZOLI  Susanna REGGIANI  Massimo RUDAN  

IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.8   pp.1183-1188
Publication Date: 2000/08/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
semiconductor materials and devices,  silicon dioxide,  Boltzmann equation,  spherical-harmonics expansion,  

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A first-order investigation of the transport and energy-loss processes in silicon dioxide is worked out in the frame of the Spherical-Harmonics solution of the Boltzmann Transport Equation. The SiO2 conduction band is treated as a single-valley spherical and parabolic band. The relevant scattering mechanisms are modeled consistently: both the polar and nonpolar electron-phonon scattering mechanisms are considered. The scattering rates for each contribution are analyzed in comparison with Monte Carlo data. A number of macroscopic transport properties of electrons in SiO2 are worked out in the steady-state regime for a homogeneous bulk structure. The investigation shows a good agreement in comparison with experiments in the low-field regime and for different temperatures.