Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)

Shyam S. PANDEY  Wataru TAKASHIMA  Shuichi NAGAMATSU  Keiichi KANETO  

IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.7   pp.1088-1093
Publication Date: 2000/07/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Organic Molecular Electronics for the 21st Century)
Category: Ultra Thin Film
poly(3-hexylthiophene),  photocarrier,  hole mobility,  time-of-flight method,  field dependence,  

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Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4 10-5 and 2.6 10-4 cm2/V. s before and after the removal of ferric ions, respectively, at a field of 5.0105 V/cm. Field dependencies of mobility before and after purification show unique feature and have been discussed in terms of the disorder model.