Experimental Characterization and Modeling of Transmission Line Effects for High-Speed VLSI Circuit Interconnects

Woojin JIN  Seongtae YOON  Yungseon EO  Jungsun KIM  

IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.5   pp.728-735
Publication Date: 2000/05/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Recent Developments in Guided-Wave Problems)
IC interconnects,  VLSI circuits,  silicon substrate,  s-parameters,  proximity effect,  

Full Text: PDF>>
Buy this Article

IC interconnect transmission line effects due to the characteristics of a silicon substrate and current return path impedances are physically investigated and experimentally characterized. With the investigation, a novel transmission line model is developed, taking these effects into account. Then an accurate signal delay on the IC interconnect lines is analyzed by using the transmission line model. The transmission line effects of the metal-insulator-semiconductor IC interconnect structure are experimentally verified with s-parameter-based wafer level signal-transient characterizations for various test patterns. They are designed and fabricated with a 0.35 µm CMOS process technology. Throughout this work, it is demonstrated that the conventional ideal RC- or RLC-model of the IC interconnects without considering these detailed physical phenomena is not accurate enough to verify the pico-second level timing of high-performance VLSI circuits.