Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers

Yasuhiko ARAKAWA  Takao SOMEYA  Koichi TACHIBANA  

IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.4   pp.564-572
Publication Date: 2000/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
InGaN,  quantum dots,  lasing oscillation,  MOCVD,  VCSELs,  

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Our recent progress in GaN-based nanostructures for quantum dot (QD) lasers and vertical microcavity surface emitting lasers (VCSELs) is discussed. We have grown InGaN self-assembled QDs on a GaN epitaxial layer, using atmospheric-pressure metalorganic chemical vapor deposition. The average diameter of the QDs was as small as 8.4 nm and strong photoluminescence emission from the QDs was observed at room temperature. Furthermore, we found that InGaN QDs could be formed even after 10 QD layers were stacked, thus increasing the total QD density. Using these growth results, we fabricated a laser structure with InGaN QDs embedded in the active layer. A clear threshold was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation. We succeeded in demonstrating in lasing action in vertical cavity surface emitting lasers at room temperature with a cavity finesse of over 200.