Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates

Akito KURAMATA  Shin-ichi KUBOTA  Reiko SOEJIMA  Kay DOMEN  Kazuhiko HORINO  Peter HACKE  Toshiyuki TANAHASHI  

IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.4   pp.546-551
Publication Date: 2000/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
GaN,  InGaN,  laser diodes,  SiC substrates,  continuous wave operation,  

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We introduce the characteristics for continuous wave operation at room temperature of InGaN laser diodes fabricated on SiC substrates. The threshold current was 60 mA, the threshold voltage was 8.3 V, and the oscillation wavelength was 404.4 nm. The lifetime of the laser diodes with a constant light output of 1 mW at 25 was 57 hours. The heat dissipation of the devices mounted p-side-up on a stem without using a heat sink was shown to be as good as that of devices mounted p-side-down with an external heat sink, owing to the high thermal conductivity of SiC substrates.