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Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias
Toshiro HIRAMOTO Makoto TAKAMIYA
IEICE TRANSACTIONS on Electronics
Publication Date: 2000/02/25
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
MOSFET, low power, low voltage, variable threshold voltage, back-bias, body effect, DTMOS, SOI,
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We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.