Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias

Toshiro HIRAMOTO  Makoto TAKAMIYA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.2   pp.161-169
Publication Date: 2000/02/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
Category: 
Keyword: 
MOSFET,  low power,  low voltage,  variable threshold voltage,  back-bias,  body effect,  DTMOS,  SOI,  

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Summary: 
We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.