Characteristics of Low-Temperature-Processed a-Si TFT for Plastic Substrates

Mitsushi IKEDA  Yoshihisa MIZUTANI  Sumio ASHIDA  Keisaku YAMADA  

IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.10   pp.1584-1587
Publication Date: 2000/10/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Electronic Displays)
mobile devices,  plastic substrates,  a-Si TFT,  low-temperature-process,  

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The a-Si TFT characteristics were studied for process temperatures of as low as 100C. The a-Si TFT kept normal characteristics for process temperature of as low as 150C. The a-Si TFT bias temperature stability was evaluated and degradation of stability initiated at around 150C. The characteristics of a-Si TFT fabricated on plastic substrates were the same as those of a-Si TFT fabricated on glass substrates at low process temperature. TFT-LCD fabricated at a process temperature lower than the glass transition temperature of plastic substrates indicated good display image. These results indicate the possibility of fabricating TFT-LCD on plastic substrates, which would promote the application of a-Si TFT-LCD for mobile devices.