Summary: The a-Si TFT characteristics were studied for process temperatures of as low as 100C. The a-Si TFT kept normal characteristics for process temperature of as low as 150C. The a-Si TFT bias temperature stability was evaluated and degradation of stability initiated at around 150C. The characteristics of a-Si TFT fabricated on plastic substrates were the same as those of a-Si TFT fabricated on glass substrates at low process temperature. TFT-LCD fabricated at a process temperature lower than the glass transition temperature of plastic substrates indicated good display image. These results indicate the possibility of fabricating TFT-LCD on plastic substrates, which would promote the application of a-Si TFT-LCD for mobile devices.