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A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications
Kohei FUJII Yasuhiko HARA Fadhel M. GHANNOUCHI Toshiyuki YAKABE Hatsuo YABE
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2000/02/25
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
nonlinear model, mm-wave, GaAs FET, simulation,
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This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.