A Sub 1-V L-Band Low Noise Amplifier in SOI CMOS

Hiroshi KOMURASAKI  Hisayasu SATO  Kazuya YAMAMOTO  Kimio UEDA  Shigenobu MAEDA  Yasuo YAMAGUCHI  Nagisa SASAKI  Takahiro MIKI  Yasutaka HORIBA  

IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E83-A    No.2    pp.220-227
Publication Date: 2000/02/25
Online ISSN: 
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
SOI CMOS,  low noise amplifier,  L band,  low voltage,  RF,  

Full Text: PDF(1.7MB)>>
Buy this Article

This paper describes a sub 1-V low noise amplifier (LNA) fabricated using a 0.35 µm SOI (silicon on insulator) CMOS process. The SOI devices have high speed performance even at low operating voltage (below 1 V) because of their smaller parasitic capacitance at source and drain than those of bulk MOSs. A body of a MOSFET can be controlled by using a field shield (FS) plate. The transistor body of the LNA is connected to its gate. The threshold voltage of the transistor becomes lower due to the body-biased effect so that a large drain current keeps the gain high, and active-body control improves the 1-dB gain compression point. A gain of 7.0 dB and a Noise Figure (NF) of 3.6 dB are obtained at 1.0 V and 1.9 GHz. The output power at the 1-dB gain compression point is +1.5 dBm. The gain and the output power at the 1-dB gain compression point are higher by 1.2 dB and 2.9 dB respectively than those of a conventionally body-fixed LNA. A 5.5 dB gain is also obtained at the supply voltage of 0.5 V.