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Multiple-Valued Logic-in-Memory VLSI Architecture Based on Floating-Gate-MOS Pass-Transistor Logic
Takahiro HANYU Michitaka KAMEYAMA
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/09/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms)
Category: Non-Binary Architectures
pass-transistor network, floating-gate MOS transistor, logic-in-memory structure, Manhattan distance, flash EEPROM technology, four-valued full adder,
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A new logic-in-memory VLSI architecture based on multiple-valued floating-gate-MOS pass-transistor logic is proposed to solve the communication bottleneck between memory and logic modules. Multiple-valued stored data are represented by the threshold voltage of a floating-gate MOS transistor, so that a single floating-gate MOS transistor is effectively employed to merge multiple-valued threshold-literal and pass-switch functions. As an application, a four-valued logic-in-memory VLSI for high-speed pattern recognition is also presented. The proposed VLSI detects a stored reference word with the minimum Manhattan distance between a 16-bit input word and 16-bit stored reference words. The effective chip area, the switching delay and the power dissipation of a new four-valued full adder, which is a key component of the proposed logic-in-memory VLSI, are reduced to about 33 percent, 67 percent and 24 percent, respectively, in comparison with those of the corresponding binary CMOS implementation under a 0.5-µm flash EEPROM technology.