Multiple-Valued Inverter Using a Single-Electron-Tunneling Circuit

Masamichi AKAZAWA
Kentarou KANAAMI
Takashi YAMADA
Yoshihito AMEMIYA

IEICE TRANSACTIONS on Electronics   Vol.E82-C    No.9    pp.1607-1614
Publication Date: 1999/09/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms)
Category: Quantum Devices and Circuits
single electron,  SET,  multiple-valued,  Coulomb blockade,  

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A multiple-valued logic inverter is proposed that uses single-electron-tunneling (SET) circuits in which the discreteness of the electron charge is utilized. The inverter circuit, which is composed of only two SET transistors, has a memory function as well as an inverter function for multiple-valued logic. A quantizing circuit and a D flip-flop circuit for multiple-valued logic can be compactly constructed by combining two inverters. A threshold device can be compactly constructed by attaching more than one input capacitor to the inverter circuit. A quaternary full adder circuit can be constructed by using two threshold devices. Implementation issues are also discussed.