A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode

Kenji NATORI  Nobuyuki SANO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.9   pp.1599-1606
Publication Date: 1999/09/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms)
Category: Quantum Devices and Circuits
Keyword: 
single electron transistor,  SET,  resonant tunneling,  current-voltage characteristics,  quantum dot,  current map,  

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Summary: 
The current-voltage characteristics of a single electron transistor (SET) in the resonant transport mode are investigated. In the future when SET devices are applied to integrated electronics, the quantum effect will seriously modify their characteristics in ultra-small geometry. The current will be dominated by the resonant transport through narrow energy levels in the dot. The simple case of a two-level system is analyzed and the transport mechanism is clarified. The transport property at low temperatures (higher than the Kondo temperature) in the low tunneling rate limit is discussed, and a current map where current values are classified in the gate bias-drain bias plane is provided. It was shown that the dynamic aspect of electron flow seriously influences the current value.