Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications

Yoshiko Matsuo IKEDA
Hirotsugu WAKIMOTO
Masakatsu MIHARA
Yoshikazu TANABE
Keiji OYA
Yoshiaki KITAURA

IEICE TRANSACTIONS on Electronics   Vol.E82-C    No.7    pp.1086-1091
Publication Date: 1999/07/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
gallium arsenide,  linear power amplifier,  single voltage supply,  MESFET,  ISM,  ETC,  

Full Text: PDF(2.7MB)>>
Buy this Article

A GaAs linear power amplifier operating with a single 3-V supply has been developed for 5.8-GHz ISM band applications. Two kinds of refractory WNx/W self-aligned gate MESFETs, a P-pocket MESFET and an asymmetric MESFET with a buried p-layer (BP- MESFET ) have been compared in terms of DC characteristics, small signal characteristics and power performances at 5.8 GHz. To obtain both high gain and high efficiency in the case of single 3-V supply operation at 5.8 GHz, we used a highly efficient and linear P-pocket MESFET for the output-stage power FET and a high-gain asymmetric MESFET with a buried p-layer (BP- MESFET ) for the driver-stage FET. The bias condition for 1-mm output-stage P-pocket MESFET was set near class-AB, so as to obtain sufficient output power with high PAE. The two-stage power amplifier MMIC module which can include all matching and biasing circuits, has been designed and fabricated. The amplifier exhibits a high power gain of 17.9 dB and a high power-added efficiency of 25.7% with a sufficient output power of 18.7 dBm at the 1-dB compression point. This self-aligned gate GaAs MESFET technology is promising for near-future 5.8-GHz applications, because of such good power performance and good mass-producibility.