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49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs
Yohtaro UMEDA Kazuo OSAFUNE Takatomo ENOKI Haruki YOKOYAMA Yasunobu ISHII
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
InP, HEMT, IC, interconnection, delay, static frequency divider,
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49-GHz operation for a state-of-the-art static frequency divider using FETs is achieved with high-performance 0.1-µm-gate InAlAs/InGaAs/InP HEMTs and high-speed double-layer interconnections with a thick low-permittivity BCB inter-layer dielectric film. An experiment shows that the propagation delay for the upper-layer line in the double-layer interconnections is less than half of that for the conventional single-layer interconnections directly on InP-substrate. The frequency divider with the double-layer interconnections is about 20% faster than the conventional one with the single-layer interconnections. A delay time analysis reveals that this speed increase is due to the decrease in interconnection propagation delay.