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60-GHz-Band Monolithic HEMT Amplifiers Using BCB Thin Film Layers on GaAs Substrates
Naoko ONO Yumi FUCHIDA Junko ONOMURA Minoru AMANO Masayuki SUGIURA Kunio YOSHIHARA Eiji TAKAGI Mitsuo KONNO
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
BCB, V-band, HEMT, MMIC, amplifier,
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A 60-GHz-band monolithic HEMT amplifier for which BCB thin film layers are adopted on GaAs substrate has been developed. The MMIC utilized a thin film microstrip line for the bias circuit and a coplanar waveguide for the RF circuit. The coplanar waveguide has the advantage of low loss, whereas the thin film microstrip line has the advantage of small size. Two different types of transmission lines were selected to coexist in the monolithic amplifier. As a result, the MMIC achieved high gain over a wider frequency range at a small size. This MMIC had a gain of over 15 dB in a frequency bandwidth of 11 GHz. In particular, the high-frequency characteristics of the transmission lines and the HEMTs were evaluated in detail for the conventional MMIC structure and the new MMIC structure. It was confirmed that this newly developed MMIC using BCB thin film layers is attractive for millimeter-wave applications.