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Inverse Modeling and Its Application to MOSFET Channel Profile Extraction
Hirokazu HAYASHI Hideaki MATSUHASHI Koichi FUKUDA Kenji NISHI
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
inverse modeling, doping profile extraction, MOSFET, threshold voltage,
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We propose a new inverse modeling method to extract 2D channel dopant profile in an MOSFET. The profile is extracted from threshold voltage (Vth) of MOSFETs with a series of gate lengths. The uniqueness of the extracted channel and drain profile is confirmed through test simulations. The extracted profile of actual 0.1 µm nMOSFETs explains reverse short channel effects (RSCE) of threshold voltage dependent on gate length including substrate bias dependence.