TCAD--Yesterday, Today and Tomorrow

Robert W. DUTTON  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.6   pp.791-799
Publication Date: 1999/06/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCAD,  device simulation,  process simulation,  IC technology,  diffusion,  ion implantation,  oxidation,  MOS scaling,  modeling,  hierarchy,  atomic-scale phenomena,  

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Summary: 
This paper outlines the modeling requirements of integrated circuit (IC) fabrication processes that have lead to and sustained the development of computer-aided design of technology (i. e. TCAD). Over a period spanning more than two decades the importance of TCAD modeling and the complexity of required models has grown steadily. The paper also illustrates typical applications where TCAD has been powerful and strategic to IC scaling of processes. Finally, the future issues of atomic-scale modeling and the need for an hierarchical approach to capture and use such detailed information at higher levels of simulation are discussed.