For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain
Kohji MATSUNAGA Yasuhiro OKAMOTO Mikio KANAMORI
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
power amplifier, intermodulation distortion, heterojunction FET, linearizer,
Full Text: PDF(648.7KB)>>
This paper describes amplification with improved linearity by employing a linearizing circuit in an input circuit of an internally-matched Ku-band high power amplifier. The linearizing circuit is composed of series L, C, R and an FET with grounded source and drain, and is connected between the input signal line and ground. This linearizing circuit was applied to a Ku-band 10 W output power amplifier utilizing a 25.2 mm gate-width double-doped Heterojunction FET. The power amplifier demonstrated a 8 dB reduction of the third-order intermodulation at about 6 dB output power backoff point from the 2 dB output compression point.