Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain

Kohji MATSUNAGA  Yasuhiro OKAMOTO  Mikio KANAMORI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.5   pp.744-749
Publication Date: 1999/05/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
power amplifier,  intermodulation distortion,  heterojunction FET,  linearizer,  

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Summary: 
This paper describes amplification with improved linearity by employing a linearizing circuit in an input circuit of an internally-matched Ku-band high power amplifier. The linearizing circuit is composed of series L, C, R and an FET with grounded source and drain, and is connected between the input signal line and ground. This linearizing circuit was applied to a Ku-band 10 W output power amplifier utilizing a 25.2 mm gate-width double-doped Heterojunction FET. The power amplifier demonstrated a 8 dB reduction of the third-order intermodulation at about 6 dB output power backoff point from the 2 dB output compression point.