Intermodulation Distortion of Low Noise Silicon BJT and MOSFET Fabricated in BiCMOS Process

Noriharu SUEMATSU  Masayoshi ONO  Shunji KUBO  Mikio UESUGI  Kouichi HASEGAWA  Kenji HIROSHIGE  Yoshitada IYAMA  Tadashi TAKAGI  Osami ISHIDA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.5   pp.692-698
Publication Date: 1999/05/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
distortion,  low noise,  BJT,  CMOS,  mobile communication,  Si-MMIC,  

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Summary: 
Even though BiCMOS process has an ability to make both BJT and MOSFET on single-chip, only BJT has been used for BiCMOS Si-MMIC LNA because of its low noise and high gain performance under low d. c. supply power. But the distortion performance of BJT should be improved for the receiver applications in some wireless systems. In this paper, intermodulation distortion characteristics comparison is carried out between BJT and MOSFET fabricated in the same BiCMOS process by the analysis based on the simplified transistor models with extracted device parameters. The analytical result shows that MOSFET has lower intermodulation distortion characteristics compared with BJT, and the result is evaluated by the measurements. In order to obtain both low distortion and low noise characteristics, a two-stage Si-MMIC LNA is developed by using BJT as the 1st stage and MOSFET as the 2nd stage of LNA. The fabricated LNA performs NF of 2.45 dB, gain of 19.3 dB, IIP3 of14.6 dBm and OIP3 of 4.7 dBm under 3 V/7.2 mA d. c. supply power.