For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
High-Voltage MOS Device Modeling with BSIM3v3 SPICE Model
Takao MYONO Eiji NISHIBE Shuichi KIKUCHI Katsuhiko IWATSU Takuya SUZUKI Yoshisato SASAKI Kazuo ITOH Haruo KOBAYASHI
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
high-voltage MOS, BSIM3, SPICE model,
Full Text: PDF>>
This paper presents a new technique for modeling High-Voltage lightly-doped-drain MOS (HV MOS) devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of Rs and Rd in HV MOS devices; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We propose to assign physical meanings and values different from the original BSIM3v3 model to three of its parameters to represent the voltage dependency of Rs and Rd. With this method, we have succeeded in highly accurate parameter extraction, and the simulated I-V characteristics of HV MOS devices using the extracted parameters match the measured results well. The relationship between the proposed modeling technique and the physical mechanism of HV MOS devices is also discussed based on measurement and device simulation results. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs, so we can use SPICE simulation for accurate circuit design of complex circuits using HV MOS devices.