Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements

Pierre LLINARES  Gerard GHIBAUDO  Yannick MOURIER  Nicolas GAMBETTA  Michel LAURENS  Jan A. CHROBOCZEK  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.4   pp.607-611
Publication Date: 1999/04/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
bipolar junction transistor,  base resistance,  emitter resistance,  1/f noise,  

Full Text: PDF>>
Buy this Article




Summary: 
A novel method of extraction of emitter, Re, and base, Rb, resistances of bipolar junction transistors, BJTs, is proposed. Re and Rb are obtained from static characteristics and noise power spectral density of low frequency, 1/f, fluctuations, measured in the base and collector currents of the devices. Measurements carried out on quasi self-aligned silicon BJTs show that Re and Rb values obtained by the proposed method scale correctly with transistor dimensions and match the values estimated from the device layout.