A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-µm Flash Memory Cells

Keiichi HARAGUCHI  Hitoshi KUME  Masahiro USHIYAMA  Makoto OHKURA  

IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.4   pp.602-606
Publication Date: 1999/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
extracting,  capacitance coupling coefficients,  sub-0.5-µm flash memory cells,  a band-to-band tunneling current,  

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A new simple method for extracting the capacitance coupling coefficients of sub-0.5-µm flash memory cells is proposed. Different from the previously proposed methods, this method is not affected by a dopant profile of source region because a band-to-band tunneling current from the interface between the drain and the substrate is probed. Use of a reference device eliminates the necessity to make assumptions concerning the electron transport mechanism. Comparison with the other methods shows that the proposed method is simple and accurate.