Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide

Katsuya SHIGA  Junko KOMORI  Masafumi KATSUMATA  Akinobu TERAMOTO  Yoji MASHIKO  

IEICE TRANSACTIONS on Electronics   Vol.E82-C    No.4    pp.589-592
Publication Date: 1999/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
oxide reliability,  extrinsic oxide breakdown,  TDDB,  thin oxide,  activation energy,  

Full Text: PDF>>
Buy this Article

A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.