Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology

Mitsuru HARADA  Tsuneo TSUKAHARA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.3   pp.553-558
Publication Date: 1999/03/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
CMOS,  SOI,  RF,  LNA,  

Full Text: PDF>>
Buy this Article



Summary: 
This paper reports L-band and C-band monolithic low noise amplifiers (LNA) fabricated with MOSFET/SIMOX (Separation by IMplanted OXygen) technology for the first time. The L-band LNA exhibits a Gain/(PdcNF) ratio of 0.7/mW, which demonstrate the potential performance advantage of this technology. The C-band LNA has 0.05/mW at 5.8 GHz. The L-band amplifier had a gain of 8.5 dB at 0.5 V, which is the lowest supply voltage ever reported in Si-based LNAs. These LNAs consist of 0.25-µm nMOSFET/SIMOX, spiral inductors, and capacitors which are fabricated with a conventional digital CMOS LSI process. It demonstrates that L- and C-band RF circuits can be made on a SIMOX wafer together with large-scale digital circuits.