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Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology
Mitsuru HARADA Tsuneo TSUKAHARA
Publication
IEICE TRANSACTIONS on Electronics
Vol.E82-C
No.3
pp.553-558 Publication Date: 1999/03/25 Online ISSN:
DOI: Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Silicon Devices Keyword: CMOS, SOI, RF, LNA,
Full Text: PDF>>
Summary:
This paper reports L-band and C-band monolithic low noise amplifiers (LNA) fabricated with MOSFET/SIMOX (Separation by IMplanted OXygen) technology for the first time. The L-band LNA exhibits a Gain/(Pdc NF) ratio of 0.7/mW, which demonstrate the potential performance advantage of this technology. The C-band LNA has 0.05/mW at 5.8 GHz. The L-band amplifier had a gain of 8.5 dB at 0.5 V, which is the lowest supply voltage ever reported in Si-based LNAs. These LNAs consist of 0.25-µm nMOSFET/SIMOX, spiral inductors, and capacitors which are fabricated with a conventional digital CMOS LSI process. It demonstrates that L- and C-band RF circuits can be made on a SIMOX wafer together with large-scale digital circuits.
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