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Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology
Mitsuru HARADA Tsuneo TSUKAHARA
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
CMOS, SOI, RF, LNA,
Full Text: PDF(676.1KB)>>
This paper reports L-band and C-band monolithic low noise amplifiers (LNA) fabricated with MOSFET/SIMOX (Separation by IMplanted OXygen) technology for the first time. The L-band LNA exhibits a Gain/(PdcNF) ratio of 0.7/mW, which demonstrate the potential performance advantage of this technology. The C-band LNA has 0.05/mW at 5.8 GHz. The L-band amplifier had a gain of 8.5 dB at 0.5 V, which is the lowest supply voltage ever reported in Si-based LNAs. These LNAs consist of 0.25-µm nMOSFET/SIMOX, spiral inductors, and capacitors which are fabricated with a conventional digital CMOS LSI process. It demonstrates that L- and C-band RF circuits can be made on a SIMOX wafer together with large-scale digital circuits.