For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy
Shuji ITO Toshiyuki NAKAMURA Hiroshi HOGA Satoshi NISHIKAWA Hirokazu FUJIMAKI Yumiko HIJIKATA Yoshihisa OKITA
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
bipolar transistor, SiGe HBT, doping level inversion, cutoff frequency, selective epitaxy,
Full Text: PDF>>
SiGe HBTs with doping level inversion, that is, a higher dopant concentration in the base than in the emitter, are realized based on the double-polysilicon self-aligned transistor scheme by means of selective epitaxy performed in a production CVD reactor. The effects of the Ge profile in the base on the transistor performance are explored. The fabricated HBT with a 12-27% graded Ge profile demonstrates a maximum cutoff frequency of 88 GHz, a maximum oscillation frequency of 65 GHz, and an ECL gate delay time of 13.8 ps.