2.5 Gb/s 1:8 DEMUX IC Composed of 0.15 µm Single-Gate CMOS

Toshiyuki OCHIAI  Hideaki MATSUHASHI  Hiroshi HOGA  Satoshi NISHIKAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.3   pp.498-503
Publication Date: 1999/03/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
CMOS,  DEMUX,  single gate CMOS,  high-speed static logic circuit,  

Full Text: PDF(802KB)>>
Buy this Article




Summary: 
A high-speed static logic circuit, the 1:8 demultiplexer (DEMUX), fabricated using single-gate CMOS technology (single-gate means the structure consisting of n+ poly-Si gate for both NMOS and PMOS transistors) has been demonstrated. To suppress short-channel effects in PMOS transistors, we only used the low-energy ion implantation (I/I) of BF2 at 10 keV for counterdoping of the channel and that at 5 keV for source/drain (S/D) extension. To control the threshold voltage Vth of PMOS transistors precisely, the channel dopants were implanted after the growth of the gate oxide because of the suppression of the transient-enhanced diffusion (TED) of boron, and the suppression of boron out-diffusion. A tree-type 1:8 DEMUX circuit composed of 0. 134 µm gate CMOS transistors operates at a high speed of 3.1 GHz and consumes a low power of 35.5 mW/GHz at VDD = 2.0 V. In this single-gate CMOS circuit, down to this small gate length, the maximum operating frequency of the DEMUX circuit increases proportionally with an increase of the inverse of the gate length without an increase of power consumption per GHz. At a practical 2.48832 Gb/s operation, the power consumption was 88 mW, and the phase margin between the input clock signal and the input data signal was 260 ps. It is suggested that a circuit composed of a single-gate CMOS transistor with 0.15 µm gate generation can be applicable to high speed ICs.