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Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding
Hiroyuki KIKUCHI Hideki TSUNETSUGU Makoto HIRANO Satoshi YAMAGUCHI Yuhki IMAI
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
GaAs MESFET, amplifier, distributor, microstrip line, flip chip,
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This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.