Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding

Hiroyuki KIKUCHI  Hideki TSUNETSUGU  Makoto HIRANO  Satoshi YAMAGUCHI  Yuhki IMAI  

IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.3   pp.475-482
Publication Date: 1999/03/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
GaAs MESFET,  amplifier,  distributor,  microstrip line,  flip chip,  

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This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.