AlGaAs/GaAs HBT ICs for 20-Gb/s Optical Transmission Systems

Nobuo NAGANO  Masaaki SODA  Hiroshi TEZUKA  Tetsuyuki SUZAKI  Kazuhiko HONJO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.3   pp.465-474
Publication Date: 1999/03/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
heterojunction bipolar transistor,  optical transmission,  preamplifier,  optical modulator driver,  clock extraction,  

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Summary: 
This report describes AlGaAs/GaAs HBT ICs for 20-Gb/s optical transmission, the preamplifier and optical modulator driver circuits, and those ICs for 10-Gb/s clock extraction circuits, the rectifier and phase shifter circuits. These ICs were fabricated using our developed hetero guard-ring fully self-aligned HBT (HG-FST) fabrication process. The Pt-Ti-Pt-Au multimetal system was also used as a base ohmic metal to reduce base contact resistance, and a high fmax of 105 GHz was obtained. Good results in the HBT IC microwave performances were achieved from the on-wafer measurements. The preamplifiers exhibited the broad bandwidth of 20. 9 GHz. The optical modulator driver performed a sufficiently large output-voltage swing of 4-VP-P at a 20-Gb/s data rate. The rectifier and the phase shifter circuits achieved good operations at 10-Gb/s. These results suggest that these HBT ICs can be applied to 20-Gb/s optical transmission and 10-Gb/s clock extraction systems.