AlGaAs/InGaAs HBT IC Modules for 40-Gb/s Optical Receiver

Risato OHHIRA  Yasushi AMAMIYA  Takaki NIWA  Nobuo NAGANO  Takeshi TAKEUCHI  Chiharu KURIOKA  Tomohiro CHUZENJI  Kiyoshi FUKUCHI  

IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.3   pp.448-455
Publication Date: 1999/03/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
heterojunction bipolar transistor,  preamplifier,  optical frontend,  distributed amplifier,  optical receiver,  

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Optical frontend and distributed amplifier IC modules, both containing GaAs heterojunction-bipolar-transistors (HBT), have been developed for 40 Gb/s optical receiver. To achieve high-speed operations, the elements in the modules including the IC and signal lines, were designed to achieve a wider bandwidth with lower electrical reflection. The influence of a bonding-wire inductance was taken into particular account in optimizing the parameters of the ICs. The optical frontend, consisting of a waveguide pin-photodiode and an HBT preamplifier IC, exhibits a transimpedance gain of 43 dBΩ and a bandwidth of 31 GHz. The distributed amplifier IC module achieves a gain of 9 dB and a bandwidth of 39 GHz. A 40-Gb/s optical receiver constructed with these modules exhibited a high receiver sensitivity of -28. 2 dBm for a 40-Gb/s optical return-to-zero signal.