High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors

Eiichi SANO  Kenji KURISHIMA  Hiroki NAKAJIMA  Shoji YAMAHATA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.11   pp.2000-2006
Publication Date: 1999/11/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
InP,  HBT,  amplifier,  flip-flop,  PLL,  

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Summary: 
A wideband, low-power preamplifier and a high-speed, low-power monolithically integrated regenerative receiver are designed and fabricated using small-scale InP/InGaAs DHBTs. The preamplifier has a gain-bandwidth product of 192 GHz with a power dissipation of 51 mW. The regenerative receiver is successfully operated at 20 Gbit/s with a power dissipation of 0.6 W and an input dynamic range of 13 dB. This IC offers the lowest energy ever reported for regenerative receivers. In addition, a 20-Gbit/s optical modulator driver with a driving voltage of 2 V is successfully fabricated. These results demonstrate the feasibility of InP/InGaAs DHBTs for high-speed, low-power lightwave communication ICs.