High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography (EMMIE)


IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.11   pp.1977-1981
Publication Date: 1999/11/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
GaAs,  HJFET,  MMIC,  millimeter wave,  

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A high gain AlGaAs/InGaAs HJFET has been developed with Embedded gate technology for Microwave and Millimeter-wave IC's using EB lithography (EMMIE). EMMIE consists of a direct SiO2 opening by two-step dry-etching with a chemically amplified resist mask. 0.14 µm gate patterns delineated on 4-inch wafers exhibited a small deviation of 10 nm in Lg and a Vth standard deviation of 55 mV. The optimum distance between the top of the gate and the recess surface (hg) was determined using a two-dimensional device simulator in order to investigate the effect of fringing gate to drain capacitance on the RF gain performance. The fabricated one-stage HJFET MMIC amplifier exhibited extremely high gain performance of 12.4 dB at 76 GHz.