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Low-Noise, Low-Power Wireless Frontend MMICs Using SiGe HBTs
Hermann SCHUMACHER Uwe ERBEN Wolfgang DURR Kai-Boris SCHAD
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Silicon-Germanium, wireless, receivers, heterojunction bipolar transistor, microwave circuits, electronic noise,
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Silicon-based monolithic microwave integrated circuits (MMICs) present an interesting option for low-cost consumer wireless systems. SiGe/Si heterojunction bipolar transistors (HBTs) are a major driving force behind Si-based MMICs, because they offer excellent microwave performance without aggressive lateral scaling. This article reviews opportunities for receiver frontend components (low-noise amplifiers and mixers) using SiGe HBTs.