A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications

Seiki GOTO  Kenichi FUJII  Tetsuo KUNII  Satoshi SUZUKI  Hiroshi KAWATA  Shinichi MIYAKUNI  Naohito YOSHIDA  Susumu SAKAMOTO  Takashi FUJIOKA  Noriyuki TANINO  Kazunao SATO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.11   pp.1936-1942
Publication Date: 1999/11/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
high-power FET,  HFET,  base station,  low distortion,  microwave,  

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Summary: 
A 100 W, low distortion AlGaAs/GaAs heterostructure FET has been developed for CDMA cellular base stations. This FET employs the longest gate finger ever reported of 800 µm to shrink the chip size. The size of the chip and the package are miniaturized to 1.242.6 mm2 and 17.4 24.0 mm2, respectively. The developed FET exhibits 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third-order intermodulation distortion and the power-added efficiency under the two-tone test condition (Δf=1 MHz) are -35 dBc and 24%, respectively at 42 dBm output power, that is 8 dB back off from the saturation power.