Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors

Noren PAN  Roger E. WELSER  Charles R. LUTZ  James ELLIOT  Jesse P. RODRIGUES  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.11   pp.1886-1894
Publication Date: 1999/11/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
HBT,  InGaP/GaAs HBTs,  AlGaAs/GaAs HBTs,  MOCVD,  reliability,  microwave devices,  

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Summary: 
Heterojunction bipolar transistors (HBTs) are key devices for a variety of applications including L-band power amplifiers, high speed A/D converters, broadband amplifiers, laser drivers, and low phase noise oscillators. AlGaAs emitter HBTs have demonstrated sufficient reliability for L-band mobile phone applications. For applications which require extended reliability performance at high junction temperatures (>250) and large current densities (>50 kA/cm2), InGaP emitter HBTs are the preferred devices. The excellent reliability of InGaP/GaAs HBTs has been confirmed at various laboratories. At a moderate current density and junction temperature, Jc = 25 kA/cm2 and Tj = 264, no device failures were reported out to 10,000 hours in a sample of 10 devices. Reliability testing performed up to a junction temperature of 360 and at a higher current density (Jc = 60 kA/cm2) showed an extrapolated MTTF of 5 105 hours at Tj = 150. The activation energy for AlGaAs/GaAs HBTs was 0.57 eV, while the activation energy for InGaP/GaAs HBTs was 0.68 eV, which indicated a similar failure mechanism for both devices.