InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond

Eiichi SANO  Yasuro YAMANE  

IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.11   pp.1879-1885
Publication Date: 1999/11/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Information and Communication System
InP,  HEMT,  analog IC,  digital IC,  packaging,  

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Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40-Gbit/s operating region. This paper describes a 0.1-µm gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40-Gbit/s lightwave communication ICs. This paper also describes the problems and challenges toward 100-Gbit/s operation.