Highly Sensitive OBIRCH System for Fault Localization and Defect Detection

Kiyoshi NIKAWA  Shoji INOUE  

IEICE TRANSACTIONS on Information and Systems   Vol.E81-D   No.7   pp.743-748
Publication Date: 1998/07/25
Online ISSN: 
Print ISSN: 0916-8532
Type of Manuscript: Special Section PAPER (Special Issue on Test and Diagnosis of VLSI)
Category: Beam Testing/Diagnosis
VLSI chip,  fault localization,  metal line defect detection,  high resistivity,  TiSi,  Al,  reliability,  yield,  failure analysis,  

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We have improved the optical beam induced resistance change (OBIRCH) system so as to detect (1) a current path as small as 10-50 µA from the rear side of a chip, (2) current paths in silicide lines as narrow as 0. 2 µm, (3) high-resistance Ti-depleted polysilicon regions in 0. 2 µm wide silicide lines, and (4) high-resistance amorphous thin layers as thin as a few nanometers at the bottoms of vias. All detections were possible even in observation areas as wide as 5 mm 5 mm. The physical causes of these detections were characterized by focused ion beam and transmission electron microscopy.