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Highly Sensitive OBIRCH System for Fault Localization and Defect Detection
Kiyoshi NIKAWA Shoji INOUE
IEICE TRANSACTIONS on Information and Systems
Publication Date: 1998/07/25
Print ISSN: 0916-8532
Type of Manuscript: Special Section PAPER (Special Issue on Test and Diagnosis of VLSI)
Category: Beam Testing/Diagnosis
VLSI chip, fault localization, metal line defect detection, high resistivity, TiSi, Al, reliability, yield, failure analysis,
Full Text: PDF(916.7KB)>>
We have improved the optical beam induced resistance change (OBIRCH) system so as to detect (1) a current path as small as 10-50 µA from the rear side of a chip, (2) current paths in silicide lines as narrow as 0. 2 µm, (3) high-resistance Ti-depleted polysilicon regions in 0. 2 µm wide silicide lines, and (4) high-resistance amorphous thin layers as thin as a few nanometers at the bottoms of vias. All detections were possible even in observation areas as wide as 5 mm 5 mm. The physical causes of these detections were characterized by focused ion beam and transmission electron microscopy.