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Device-Deviation Tolerant Elastic-Vt CMOS Circuits with Fine-Grain Power Control Capability
Masayuki MIZUNO Hitoshi ABIKO Koichiro FURUTA Isami SAKAI Masakazu YAMASHINA
IEICE TRANSACTIONS on Electronics
Publication Date: 1998/09/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Novel VLSI Processor Architectures)
low-threshold voltage, leakage current, supply-voltage fluctuation, supply-voltage control, low power dissipation,
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An elastic-Vt CMOS circuit is proposed which facilitates both high speed and low power consumption at low supply voltages. This circuit permits fine-grain power control on each multiple circuit block composing a chip, and it is not sensitive to design factors as device-parameter deviations or operating-environment variations. It also does not require any such additional fabrication technology as triple-well structure or multi-threshold voltage. The effectiveness of the circuits design was confirmed in applying it to specially fabricated 16-bit adders and 4-kb SRAMs based on 1. 5-V, 0. 35- µm CMOS technology.